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SMD Type
MOS Field Effect Transistor 2SK3467
TO-263
+0.1 1.27-0.1
MOSFET
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
4.5 V drive available Low on-state resistance
+0.2 8.7-0.2
RDS(on)1 = 6.0 m Low gate charge
MAX. (VGS = 10 V, ID = 40 A)
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+0.2 5.28-0.2
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode Surface mount device available
2.54 5.08
+0.1 -0.1
+0.2 2.54-0.2
+0.2 15.25-0.2
+0.2 2.54-0.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 20 20 80 320 76 1.5 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD ID =80A, VDD =16V, VGS = 10 V ID=40A,VGS(on)=10V,RG=10 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=20V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=40A VGS=10V,ID=40A VGS=4.5V,ID=40A 1.5 20 4.8 6.7 2800 1200 600 16 23 74 31 55 9 17 6.0 9.5 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC
5.60
1 Gate 2 Drain 3 Source
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